Identification of the physical signatures of CDM induced latent defects into a DC-DC converter using low frequency noise measurements

نویسندگان

  • Yuan Gao
  • Nicolas Guitard
  • Christophe Salamero
  • Marise Bafleur
  • Laurent Bary
  • Laurent Escotte
  • Patrick Gueulle
  • Lionel Lescouzères
چکیده

In this paper, it is demonstrated that low frequency noise measurements are an efficient tool for the detection of latent defects induced by CDM stress in a complex circuit such as a DC-DC converter. This technique is able to detect the presence of a defect whereas classical electrical testing techniques such as Iddq or functionality test fail. In addition, a correlation between the noise signature and the nature of the defect is established. In particular, the presence of trapped charges in the oxides is clearly identified.

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عنوان ژورنال:
  • Microelectronics Reliability

دوره 47  شماره 

صفحات  -

تاریخ انتشار 2007